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ISSUED DATE :2005/01/07 REVISED DATE :2006/12/25B
GTS9926E
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
20V 28m 4.6A
The GTS9926E provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. *Low on-resistance *Capable of 2.5V gate drive *Low d...
