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GU88LS02

Part Number	GU88LS02
Manufacturer	GTM
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published	Oct 5, 2007
Detailed Description	www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2006/01/05 REVISED DATE : GU88LS02 N-CHANNEL ENHANCEMENT MODE...
Datasheet	GU88LS02 PDF File

Overview

www.
DataSheet4U.
com Pb Free Plating Product ISSUED DATE :2006/01/05 REVISED DATE : GU88LS02 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 25V 5m 75A Description The GU88LS02 used advanced design and process to achieve low gate charge, low on-resistance and fast switching performance.
The TO-263 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
*Low Gate Charge *Simple Drive Requirement *Fast Switching Features Package Dimensions REF.
A b L4 c L3 L1 E Millimeter REF.
Min.
Max.
4.
40 4.
80 c2 0.
76 1.
00 b2 0.
00 0.
30 B D 0.
36 0.
5 e 1.
50 REF.
L 2.
29 2.
79 9.
80 10.
4 L2 Millimeter Min.
Max.
1.
25 1.
45 1.
17 1.
47 8.
6 9.
0 2.
54 REF.
14.
6 15.
8 0˚ 8˚ 1.
27 REF.
Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@4.
5V Continuous Drain Current, VGS@4.
5V Pulsed Drain Current 1 Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25...

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GU88LS02 N-CHANNEL ENHANCEMENT MODE POWER MOSFET - GTM

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