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RQG2001URAQF

Renesas Technology
Part Number RQG2001URAQF
Manufacturer Renesas Technology
Description NPN Silicon Germanium Transistor High Frequency Low Noise Amplifier
Published Oct 9, 2007
Detailed Description www.DataSheet4U.com RQG2001URAQF NPN Silicon Germanium Transistor High Frequency Medium Power Amplifier REJ03G1554-0100...
Datasheet PDF File RQG2001URAQF PDF File

RQG2001URAQF
RQG2001URAQF

Overview
www.
DataSheet4U.
com RQG2001URAQF NPN Silicon Germanium Transistor High Frequency Medium Power Amplifier REJ03G1554-0100 Rev.
1.
00 Aug 10, 2007 Features • Ideal for 2 GHz Band applications.
e.
g 2.
4 GHz WLAN, Digital cordless phone.
• Low Distortion and Excellent Linearity IP3 at output = +30 dBm typ.
, P1dB at output = +19 dBm typ.
, f = 1.
8 GHz • High Transition Frequency fT = 20 GHz typ.
• High Collector to Emitter Voltage VCEO = 5 V Outline RENESAS Package code: PTSP0004ZA-A (Package name: CMPAK-4) 2 3 1 4 1.
Emitter 2.
Collector 3.
Emitter 4.
Base Note: Marking is “UR-”.
Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base vo...


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