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BFR96

Part Number	BFR96
Manufacturer	ETC
Description	N-P-N bipolar silicon RF transistor
Published	Oct 9, 2007
Detailed Description	www.DataSheet4U.com BFR96 N-P-N bipolar silicon RF transistor in plastic package SOT-37 5.2max 5.5max 1.5max 9.0max 1....
Datasheet	BFR96 PDF File

Overview

www.
DataSheet4U.
com BFR96 N-P-N bipolar silicon RF transistor in plastic package SOT-37 5.
2max 5.
5max 1.
5max 9.
0max 1.
0max 1 5.
5max 2 3 Pinouts: 1- Base, 2- Collector, 3-Emitter Ratings Symbol VCBO VCEO VEBO IC Ptot Parameter, unit Collector- base voltage, V Collector- emitter voltage, V Emitter- base voltage, V Collector current, mA Power dissipation, mW Limits 20 15 3 75 700 Characteristics (T A = 25°C) Symbol fT hFE ICBO GPS F CC Parameter, unit, test conditions Transition frequency, GHz, IE=50mA, VCB=10V DC current gain, IE=50mA, VCB=10V Collector cut-off current, nA, IE= 0mA, VCB=10V Power gain, dB, IE=50mA, VCE=10V, f=500MHz Noise figure, dB IE=50mA, VCE=10V, f=500MHz Collect...

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