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2W PACKAGED POWER PHEMT FEATURES ♦ 32.5 dBm Linear Output Power ♦ 17 dB Power Gain at 2 GHz ♦ 9.5 dB Maximum Stable Gain at 10 GHz ♦ 42 dBm Output IP3 ♦ 45% Power-Added Efficiency at 2 GHz
FPD3000P100
DESCRIPTION AND APPLICATIONS The FPD3000P100 is a packaged AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT), f...
