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FPD3000SOT89

Filtronic Compound Semiconductors
Part Number FPD3000SOT89
Manufacturer Filtronic Compound Semiconductors
Description HIGH LINEARITY PACKAGED PHEMT
Published Oct 27, 2007
Detailed Description www.DataSheet4U.com LOW NOISE, HIGH LINEARITY PACKAGED PHEMT • PERFORMANCE (1850 MHz) ♦ 30 dBm Output Power (P1dB) ♦ 13...
Datasheet PDF File FPD3000SOT89 PDF File

FPD3000SOT89
FPD3000SOT89

Overview
www.
DataSheet4U.
com LOW NOISE, HIGH LINEARITY PACKAGED PHEMT • PERFORMANCE (1850 MHz) ♦ 30 dBm Output Power (P1dB) ♦ 13 dB Small-Signal Gain (SSG) ♦ 1.
3 dB Noise Figure ♦ 45 dBm Output IP3 ♦ 45% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Available in Lead Free Finish: FPD3000SOT89E FPD3000SOT89 • DESCRIPTION AND APPLICATIONS The FPD3000SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT).
It utilizes a 0.
25 x 3000 µm Schottky barrier Gate, defined by highresolution stepper-based photolithography.
The recessed and offset Gate structure minimizes parasitics to optimize performance, with an epitaxial structure designed for impr...


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