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M58LT128GST

STMicroelectronics
Part Number M58LT128GST
Manufacturer STMicroelectronics
Description (M58LT128GSB / M58LT128GST) Flash Memories
Published Oct 31, 2007
Detailed Description www.DataSheet4U.com M58LT128GST M58LT128GSB 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Fla...
Datasheet PDF File M58LT128GST PDF File

M58LT128GST
M58LT128GST

Overview
www.
DataSheet4U.
com M58LT128GST M58LT128GSB 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.
8V Supply Secure Flash Memories PRELIMINARY DATA Features Summary ■ SUPPLY VOLTAGE – VDD = 1.
7 to 2.
0V for program, erase and read – VDDQ = 2.
7 to 3.
6V for I/O Buffers – VPP = 9V for fast program SYNCHRONOUS / ASYNCHRONOUS READ – Random Access: 110ns – Asynchronous Page Read: 25ns.
– Synchronous Burst Read: 52MHz SYNCHRONOUS BURST READ SUSPEND PROGRAMMING TIME – 10µs typical Word program time using Buffer Enhanced Factory Program command MEMORY ORGANIZATION – Multiple Bank Memory Array: 8 Mbit Banks – Parameter Blocks (Top or Bottom location) DUAL OPERATIONS – program/erase in one Bank while...


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