N-Channel MOSFET
Description
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DFF4N60
N-Channel MOSFET
Features
High ruggedness RDS(on) (Max 2.5 )@VGS=10V 1. Gate {
{ {
N-Channel MOSFET
2. Drain
BVDSS = 600V RDS(ON) = 2.5 ohm ID = 4A
3. Source
Gate Charge (Typical 25nC) Improved dv/dt Capability 100% Avalanche Tested
General Description
This N-channel enhancement mode field-effect power transistor using D& I s...
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