N-Channel MOSFET
Description
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DFF50N06
N-Channel MOSFET
Features
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RDS(on) (Max 0.023Ω )@VGS=10V Gate Charge (Typical 36nC) Improved dv/dt Capability High ruggedness 100% Avalanche Tested
2.Drain
BVDSS = 60V
1.Gate 3.Source
RDS(ON) = 0.023 ohm ID = 28A
General Description
This N-channel enhancement mode field-effect power transistor using DI semiconducto...
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