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DBT134-800

DnI
Part Number DBT134-800
Manufacturer DnI
Description Triacs
Published Nov 3, 2007
Detailed Description www.DataSheet4U.com DBT134 - 800 Triacs / Sensitive Gate Symbol Features Repetitive Peak Off-State Voltage : 800V R.M....
Datasheet PDF File DBT134-800 PDF File

DBT134-800
DBT134-800


Overview
www.
DataSheet4U.
com DBT134 - 800 Triacs / Sensitive Gate Symbol Features Repetitive Peak Off-State Voltage : 800V R.
M.
S On-State Current ( IT(RMS)= 4 A ) High Commutation dv/dt Sensitive Gate Triggering 4 Mode 2.
T2 BVDRM = 800V IT(RMS) = 4 A 3.
Gate 1.
T1 ITSM = 25 A TO-126 General Description This device is sensitive gate triac suitable for direct coupling to TTL, HTL, CMOS and application such as various logic functions, low power AC switching applications, such as fan speed, small light controllers and home appliance equipment.
1 2 3 Absolute Maximum Ratings Symbol VDRM IT(RMS) ITSM I2 t PGM PG(AV) IGM VGM TJ TSTG ( TJ = 25°C unless otherwise specified ) Condition Sine wave, 50 to 60 Hz, Gate open TC = 104 °C, Full Sine wave One Cycle, 50Hz/60Hz, Peak, Non-Repetitive tp= 10ms TC = 104 °C, Pulse width Over any 20ms period tp = 20us, TJ=125°C tp = 20us, TJ=125°C 1.
0us Parameter Repetitive Peak Off-State Voltage R.
M.
S On-State Current Surge On-State Current I2t for Fusing Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Current Peak Gate Voltage Operating Junction Temperature Storage Temperature Ratings 800 4 25/27 3.
1 5 0.
5 2 5 - 40 ~ 125 - 40 ~ 150 Units V A A A 2s W W A V °C °C Sept.
2006, Rev.
0 copyright @ D&I Semiconductor Co.
, Ltd.
, All rights reserved.
1/5 www.
DataSheet4U.
com DBT134 - 800 Electrical Characteristics Symbol Items Repetitive Peak Off-State Current Peak On-State Voltage Conditions VD = VDRM, Single Phase, Half Wave TJ = 125 °C IT = 5 A, Inst.
Measurement Ratings Min.
Typ.
Max.
0.
5 1.
4 1.
7 5 5 Unit IDRM VTM I+GT1 I -GT1 mA V Gate Trigger Current I -GT3 I+GT3 V+GT1 V-GT1 Gate Trigger Voltage V-GT3 V+GT3 VGD (dv/dt)c IH Rth(j-c) Rth(j-a) Non-Trigger Gate Voltage Critical Rate of Rise Off-State Voltage at Commutation Holding Current Thermal Impedance Thermal Impedance VD = 6 V, RL=10 5 10 1.
5 1.
5 VD = 6 V, RL=10 1.
5 2.
5 TJ = 125 °C, VD = 1/2 VDRM TJ = 125 °C, [di/dt]c = -0.
75 A/ms, VD=2/3 VDRM 0.
2 5.
0 1.
2 ...



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