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E180NE10

STMicroelectronics
Part Number E180NE10
Manufacturer STMicroelectronics
Description STE180NE10
Published Nov 13, 2007
Detailed Description www.DataSheet4U.com ® STE180NE10 N-CHANNEL 100V - 4.5 mΩ - 180A ISOTOP STripFET™ POWER MOSFET TYPE STE180NE10 s s s s...
Datasheet PDF File E180NE10 PDF File

E180NE10
E180NE10

Overview
www.
DataSheet4U.
com ® STE180NE10 N-CHANNEL 100V - 4.
5 mΩ - 180A ISOTOP STripFET™ POWER MOSFET TYPE STE180NE10 s s s s s V DSS 100 V R DS(on) < 6 mΩ ID 180 A TYPICAL RDS(on) = 4.
5 mΩ 100% AVALANCHE TESTED LOW INTRINSIC CAPACITANCE GATE CHARGE MINIMIZED REDUCED VOLTAGE SPREAD DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process.
The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
APPLICATIONS s SMPS & UPS s MOTOR CONTROL s WELDING EQUIPMENT s OUTPUT STAGE FOR PWM, ULTRASONIC CIRCUITS ISOTOP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol V DS V DGR V GS ID ID I DM ( • ) P tot V ISO T s tg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current...


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