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S9724

Hamamatsu Corporation
Part Number S9724
Manufacturer Hamamatsu Corporation
Description Si PIN photodiode Large area Si PIN photodiode
Published Dec 2, 2007
Detailed Description www.DataSheet4U.com PHOTODIODE Si PIN photodiode S9723, S9724 Large area Si PIN photodiode for direct detection S9723...
Datasheet PDF File S9724 PDF File

S9724
S9724

Overview
www.
DataSheet4U.
com PHOTODIODE Si PIN photodiode S9723, S9724 Large area Si PIN photodiode for direct detection S9723 and S9724 are large-area Si detectors specifically designed for the direct detection of high-energy charged particles and X-rays.
These Si detectors are mounted on PC boards with holes for the purpose of ∆E-E detection of charged particles.
These detector’s thicknesses are 100 ± 5 µm (S9723) and 10 ± 2.
5 µm (S9724).
Thickness uniformities of the active area are as good as 2.
0 µm Typ.
(S9723) and 1.
0 µm Typ.
(S9724).
This ensures excellent sensitivity uniformity over the entire active area.
Features Applications l Large area l Low dark current l Thickness uniformity *1 : 2 µm (S9723) l Active area : 26 × 26 × 0.
1 t mm (S9723) 1 µm (S9724) 10 × 10 × 0.
01 t mm (S9724) l Heavy ions energy detection l X-ray detection l ∆E-E detection s Specifications/Absolute maximum ratings Parameter Symbol Active area Detector thickness Thickness uniformity *1 Surface orientation Front side Dead layer thickness *2 Rear side Reverse voltage VR Max.
Current Operating temperature *3 Topr Storage temperature *3 Tstg *1: Variation in the detector thickness *2: Reference value *3: No condensation S9723 26 × 26 100 ± 5 2.
0 (111) 1 1 20 2 0 to +60 0 to +80 2 S9724 10 × 10 10 ± 2.
5 1.
0 Unit mm µm µm µm V mA °C °C s Electrical and optical characteristics (Typ.
Ta=25 °C, unless otherwise noted) Parameter Full depletion voltage Dark current Rise time Terminal capacitance Symbol VD ID tr Ct Condition VR=VD VR=VD, RL=50 Ω VR=VD, f=1 MHz Min.
S9723 Typ.
5 2 80 0.
75 Max.
10 50 Min.
S9724 Typ.
0.
5 0.
01 100 1 Max.
1 0.
1 Unit V nA ns nF PRELIMINARY DATA Sep.
2004 1 www.
DataSheet4U.
com Si PIN photodiode s Dark current vs.
reverse voltage 10 nA S9723 (Typ.
Ta=25 ˚C) S9723, S9724 s Terminal capacitance vs.
reverse voltage 100 nF (Typ.
Ta=25 ˚C) TERMINAL CAPACITANCE 1 nA DARK CURRENT 10 nF S9723 100 pA 10 pA S9724 1 nF S9724 1 pA 100 fA 0.
01 0.
1 1 10 100 100 pF ...


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