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GA600HD25S

International Rectifier
Part Number GA600HD25S
Manufacturer International Rectifier
Description Standard Speed IGBT
Published Jan 8, 2008
Detailed Description www.DataSheet4U.com PD - 94341A GA600HD25S StandardTM Speed IGBT SINGLE SWITCH IGBT DUAL INT-A-Pak Features • Standard...
Datasheet PDF File GA600HD25S PDF File

GA600HD25S
GA600HD25S


Overview
www.
DataSheet4U.
com PD - 94341A GA600HD25S StandardTM Speed IGBT SINGLE SWITCH IGBT DUAL INT-A-Pak Features • Standard speed, optimized for battery powered application • Very low conduction losses • HEXFREDTM antiparallel diodes with ultra-soft recovery • Industry standard package • UL recognition pending • Internal thermistor VCES = 250V VCE(on) typ.
= 1.
20V @VGE = 15V, IC = 600A Benefits • Increased operating efficiency • Direct mounting to heatsink • Performance optimized for power conversion: UPS, SMPS, Welding • Lower EMI, requires less snubbing Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C ICM ILM IFM VGE VISOL PD @ TC = 25°C PD @ TC = 85°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Pulsed Collector Current Peak Switching Current‚ Peak Diode Forward Current Gate-to-Emitter Voltage RMS Isolation Voltage, Any Terminal To Case, t = 1 min Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Range Storage Temperature Range Max.
250 600 1200 1200 1200 ±17 2500 1920 1000 -40 to +150 -40 to +125 Units V A V W °C Thermal / Mechanical Characteristics Parameter RθJC RθJC RθCS Thermal Resistance, Junction-to-Case - IGBT Thermal Resistance, Junction-to-Case - Diode Thermal Resistance, Case-to-Sink - Module Mounting Torque, Case-to-Heatsink ƒ Mounting Torque, Case-to-Terminal 1, 2 ƒ Mounting Torque, Case-to-Terminal 3,4,5 Weight of Module Typ.
— — 0.
04 — — — 400 Max.
0.
065 0.
20 — 6.
0 5.
0 2.
0 — Units °C/W N.
m g www.
irf.
com 1 09/02/02 www.
DataSheet4U.
com GA600HD25S Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES VCE(on) VGE(th) ∆VGE(th)/∆TJ gfe ICES VFM IGES ∆TDP R-T25 Parameter Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Voltage Min.
250 — — Gate Threshold Voltage 3.
0 Temperature Coeff.
of Threshold Voltage — Forward Transconductance ƒ — Collector-to-Emitter Leaking Current — — Diode Forward Voltage - Maximum — — Gate-to-Emitter Leakage Current — Puls...



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