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IPD26N06S2L-35

Infineon Technologies
Part Number IPD26N06S2L-35
Manufacturer Infineon Technologies
Description Power Transistor
Published Jan 29, 2008
Detailed Description www.DataSheet4U.com IPD26N06S2L-35 OptiMOS® Power-Transistor Features • N-channel Logic Level - Enhancement mode • Aut...
Datasheet PDF File IPD26N06S2L-35 PDF File

IPD26N06S2L-35
IPD26N06S2L-35

Overview
www.
DataSheet4U.
com IPD26N06S2L-35 OptiMOS® Power-Transistor Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested Product Summary V DS R DS(on),max (SMD version) ID 55 35 30 V mΩ A PG-TO252-3-11 Type IPD26N06S2L-35 Package PG-TO252-3-11 Marking 2N06L35 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol ID Conditions T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V1) Pulsed drain current1) Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS V GS P tot T j, T stg T C=25 °C T C=25 °C I D=26A Value 30 22 120 80 ±20 68 -55 .
.
.
+175 55/175/56 mJ V W °C Unit A Rev.
1.
0 page 1 2006-07-18 www.
DataSheet4U.
com IPD26N06S2L-35 Parameter Symbol Conditions min.
Values typ.
max.
Unit Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction ambient, leaded SMD version, device on PCB R thJC R thJA R thJA minimal footprint 6 cm2 cooling area2) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D= 1 mA V GS(th) I DSS V DS=V GS, I D=26 µA V DS=55 V, V GS=0 V, T j=25 °C V DS=55 V, V GS=0 V, T j=125 °C1) Gate-source leakage current Drain-source on-state resistance Drain-source on-state resistance I GSS R DS(on) RDS(on) V GS=20 V, V DS=0 V V GS=4.
5 V, I D=13 A V GS=10 V, I D=13 A 55 1.
2 1.
6 0.
01 2.
0 1 µA V 2.
2 100 75 50 K/W - 1 1 34 27 100 100 47 35 nA mΩ mΩ Rev.
1.
0 page 2 2006-07-18 www.
DataSheet4U.
com IPD26N06S2L-35 Parameter Symbol Conditions min.
Values typ.
max.
Unit Dynamic characteristics1) Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay...


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