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IPD16CNE8NG

Infineon Technologies
Part Number IPD16CNE8NG
Manufacturer Infineon Technologies
Description Power-Transistor
Published Apr 9, 2008
Detailed Description www.DataSheet4U.com IPB16CNE8N G IPI16CNE8N G IPD16CNE8N G IPP16CNE8N G OptiMOS®2 Power-Transistor Features • N-chann...
Datasheet PDF File IPD16CNE8NG PDF File

IPD16CNE8NG
IPD16CNE8NG

Overview
www.
DataSheet4U.
com IPB16CNE8N G IPI16CNE8N G IPD16CNE8N G IPP16CNE8N G OptiMOS®2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application Product Summary V DS R DS(on),max (TO252) ID 85 16 53 V mΩ A • Ideal for high-frequency switching and synchronous rectification Type IPB16CNE8N G IPD16CNE8N G IPI16CNE8N G IPP16CNE8N G Package Marking PG-TO263-3 16CNE8N PG-TO252-3 16CNE8N PG-TO262-3 16CNE8N PG-TO220-3 16CNE8N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter C...


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