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IPB11N03LAG

Infineon Technologies
Part Number IPB11N03LAG
Manufacturer Infineon Technologies
Description Power-Transistor
Published Apr 9, 2008
Detailed Description www.DataSheet4U.com IPB11N03LA G OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qua...
Datasheet PDF File IPB11N03LAG PDF File

IPB11N03LAG
IPB11N03LAG

Overview
www.
DataSheet4U.
com IPB11N03LA G OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • 175 °C operating temperature • dv /dt rated • Pb-free lead plating; RoHS compliant Product Summary V DS R DS(on),max (SMD version) ID 25 11.
2 30 V mΩ A PG-TO263-3-2 Type IPB11N03LA G Package PG-TO263-3-2 Marking 11N03LA Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C2) T C=100 °C Pulsed drain current Aval...


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