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IPB100N08S2-07

Infineon Technologies
Part Number IPB100N08S2-07
Manufacturer Infineon Technologies
Description Power-Transistor
Published Apr 9, 2008
Detailed Description www.DataSheet4U.com IPB100N08S2-07 IPP100N08S2-07, IPI100N08S2-07 OptiMOS® Power-Transistor Features • N-channel - Enh...
Datasheet PDF File IPB100N08S2-07 PDF File

IPB100N08S2-07
IPB100N08S2-07

Overview
www.
DataSheet4U.
com IPB100N08S2-07 IPP100N08S2-07, IPI100N08S2-07 OptiMOS® Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested PG-TO263-3-2 Product Summary V DS R DS(on),max (SMD version) ID 75 6.
8 100 V mΩ A PG-TO220-3-1 PG-TO262-3-1 Type IPB100N08S2-07 IPP100N08S2-07 IPI100N08S2-07 Package PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Ordering Code SP0002-19044 SP0002-19005 SP0002-19041 Marking PN0807 PN0807 PN0807 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1) Symbol ID Conditions T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Pulsed drain current2) Avalanche energy, single pulse2) Gate source voltage4) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS V GS P tot T j, T stg T C=25 °C T C=25 °C I D= 80 A Value 100 94 400 810 ±20 300 -55 .
.
.
+175 55/175/56 mJ V W °C Unit A Rev.
1.
0 page 1 2006-03-03 www.
DataSheet4U.
com IPB100N08S2-07 IPP100N08S2-07, IPI100N08S2-07 Parameter Symbol Conditions min.
Thermal characteristics2) Thermal resistance, junction - case Thermal resistance, junction ambient, leaded SMD version, device on PCB R thJC R thJA R thJA minimal footprint 6 cm2 cooling area5) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage V (BR)DSS V GS=0 V, I D= 1 mA V GS(th) V DS=V GS, I D=250 µA V DS=75 V, V GS=0 V, T j=25 °C V DS=75 V, V GS=0 V, T j=125 °C2) Gate-source leakage current Drain-source on-state resistance I GSS RDS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=80 A, V GS=10 V, I D=80 A, SMD version 75 2.
1 3.
0 4.
0 V 0.
5 62 62 40 K/W Values typ.
max.
Unit Zero gate voltage drain current I DSS - 0.
01 1 µA - 1 1 5.
8 5.
5 100 100 7.
1 6.
8 nA mΩ Rev.
1.
0 page 2 2006-03-03 www.
DataSheet4U...


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