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IPB048N06L

Infineon Technologies
Part Number IPB048N06L
Manufacturer Infineon Technologies
Description Power-Transistor
Published Apr 9, 2008
Detailed Description www.DataSheet4U.com IPP048N06L G IPB048N06L G OptiMOS® Power-Transistor Features • For fast switching converters and ...
Datasheet PDF File IPB048N06L PDF File

IPB048N06L
IPB048N06L

Overview
www.
DataSheet4U.
com IPP048N06L G IPB048N06L G OptiMOS® Power-Transistor Features • For fast switching converters and sync.
rectification • N-channel enhancement - logic level • 175 °C operating temperature • Avalanche rated • Pb-free lead plating, RoHS compliant Product Summary V DS R DS(on),max ID SMDversion 60 4.
4 100 V mΩ A Type IPP048N06L IPB048N06L Package Marking P-TO220-3-1 048N06L P-TO263-3-2 048N06L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C1) T C=100 °C Pulsed drain current Avalanche energy, single pulse Reverse diode d v /dt Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 1) 2) Value 100 100 400 810 6 ±20 Unit A I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 °C2) I D=100 A, R GS=25 Ω I D=100 A, V DS=48 V, di /dt =200 A/µs, T j,max=175 °C mJ kV/µs V W °C T C=25 °C 300 -55 .
.
.
175 55/175/56 Current is limited by bondwire; with an RthJC=0.
5 the chip is able to carry 161A See figure 3 Rev.
1.
11 page 1 2006-04-20 www.
DataSheet4U.
com IPP048N06L G Parameter Symbol Conditions min.
Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area3) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage V (BR)DSS V GS=0 V, I D=1 mA V GS(th) V DS=V GS, I D=270 µA V DS=60 V, V GS=0 V, T j=25 °C V DS=60 V, V GS=0 V, T j=125 °C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=100 A V GS=4.
5 V, I D=66 A V GS=10 V, I D=100 A, SMD version V GS=4.
5 V, I D=66A, SMD version Gate resistance Transconductance RG g fs |V DS|>2|I D|R DS(on)max, I D=100 A 92 60 1.
2 1.
6 Values typ.
IPB048N06L G Unit max.
0.
5 62 40 K/W 2 V Zero gate voltage drain current I DSS - 0.
01 1 µA - 1 10 3.
...


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