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IPB09N03LAG

Infineon Technologies
Part Number IPB09N03LAG
Manufacturer Infineon Technologies
Description Power-Transistor
Published Apr 9, 2008
Detailed Description www.DataSheet4U.com IPB09N03LA G OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qua...
Datasheet PDF File IPB09N03LAG PDF File

IPB09N03LAG
IPB09N03LAG

Overview
www.
DataSheet4U.
com IPB09N03LA G OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target applications • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • 175 °C operating temperature • dv /dt rated • Pb-free lead plating; RoHS compliant Product Summary V DS R DS(on),max (SMD version) ID 25 8.
9 50 V mΩ A PG-TO263-3-2 Type IPB09N03LA G Package PG-TO263-3-2 Marking 09N03LA Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C2) T C=100 °C Pulsed drain current Avalanche energy, single pulse Reverse diode d v /dt Gate source voltage4) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 1) Value 50 46 350 75 6 ±20 Unit A I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 °C3) I D=45 A, R GS=25 Ω I D=50 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C mJ kV/µs V W °C T C=25 °C 63 -55 .
.
.
175 55/175/56 J-STD20 and JESD22 Rev.
1.
6 page 1 2006-05-11 www.
DataSheet4U.
com IPB09N03LA G Parameter Symbol Conditions min.
Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area5) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=20 µA V DS=25 V, V GS=0 V, T j=25 °C V DS=25 V, V GS=0 V, T j=125 °C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=4.
5 V, I D=30 A, SMD version V GS=10 V, I D=30 A, SMD version Gate resistance Transconductance RG g fs |V DS|>2|I D|R DS(on)max, I D=30 A 25 1.
2 1.
6 0.
1 2 1 µA V 2.
4 62 40 K/W Values typ.
max.
Unit - 10 10 12.
1 100 100 15.
1 nA mΩ 22 7.
4 1 45 8.
9 Ω...


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