DatasheetsPDF.com

IPP041N04NG

Infineon Technologies
Part Number IPP041N04NG
Manufacturer Infineon Technologies
Description Power-Transistor
Published Apr 9, 2008
Detailed Description Type !"#$%!&™3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters •...
Datasheet PDF File IPP041N04NG PDF File

IPP041N04NG
IPP041N04NG

Overview
Type !"#$%!&™3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 100% Avalanche tested • Pb-free plating; RoHS compliant • Halogen-free according to IEC61249-2-21 Product Summary V DS R DS(on),max ID Type IPB041N04N G IPP041N04N G IPP041N04N G IPB041N04N G 40 V 4.
1 mW 80 A Package Marking PG-TO263-3 041N04N PG-TO220-3 041N04N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current2) Avalanche current, single pulse3) Avalanche energy, single pulse Gate source voltage 1) J-STD20 and JESD22 ID V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C I D,pulse I AS E AS V GS T C=25 °C T C=25 °C I D=80 A, R GS=25 W Value Unit 80 A 80 400 80 60 mJ ±20 V Rev.
1.
2 page 1 2009-12-17 M...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)