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FQPF4N90C

Fairchild Semiconductor
Part Number FQPF4N90C
Manufacturer Fairchild Semiconductor
Description 900V N-Channel MOSFET
Published May 20, 2008
Detailed Description FQP4N90C / FQPF4N90C — N-Channel QFET® MOSFET FQP4N90C / FQPF4N90C N-Channel QFET® MOSFET 900 V, 4.0 A, 4.2 Ω December...
Datasheet PDF File FQPF4N90C PDF File

FQPF4N90C
FQPF4N90C


Overview
FQP4N90C / FQPF4N90C — N-Channel QFET® MOSFET FQP4N90C / FQPF4N90C N-Channel QFET® MOSFET 900 V, 4.
0 A, 4.
2 Ω December 2013 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Features • 4.
0 A, 900 V, RDS(on) = 4.
2 Ω (Max.
) @ VGS = 10 V, ID = 2.
0 A • Low Gate Charge (Typ.
17 nC) • Low Crss (Typ.
5.
6 pF) • 100% Avalanche Tested D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100...



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