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TC1301

Part Number	TC1301
Manufacturer	Transcom
Description	Low Noise and Medium Power GaAs FETs
Published	Jun 9, 2008
Detailed Description	TC1301 REV.2_04/12/2004 Low Noise and Medium Power GaAs FETs FEATURES Low Noise Figure: NF = 0.8 dB Typical at 12 GHz w...
Datasheet	TC1301 PDF File

Overview

TC1301 REV.
2_04/12/2004 Low Noise and Medium Power GaAs FETs FEATURES Low Noise Figure: NF = 0.
8 dB Typical at 12 GHz www.
DataSheet4U.
com • High Associated Gain: Ga = 10 dB Typical at 12 GHz • High Dynamic Range: 1 dB Compression Power P-1 = 24 dBm at 12 GHz • • • • Breakdown Voltage: BVDGO ≥ 9 V Lg = 0.
25 µm, Wg = 600 µm All-Gold Metallization for High Reliability 100 % DC Tested DESCRIPTION The TC1301 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) chip, which has very low noise figure, high associated gain and high dynamic range.
The device can be used in circuits up to 40 GHz and suitable for low noise and medium power amplifier applications including a wide range of c...

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