HEXFET Power MOSFET
Description
PD - 96066B
IRF1902UPbF
HEXFET® Power MOSFET
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Ultra Low On-Resistance N-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free
VDSS
20V
RDS(on) max (mW)
85@VGS = 4.5V 170@VGS = 2.7V
ID
4.0A 3.2A
Description
These N-Channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to ...
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