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RD16HHF1

Part Number	RD16HHF1
Manufacturer	Mitsubishi Electric
Description	Silicon MOSFET Power Transistor
Published	Jul 1, 2008
Detailed Description	< Silicon RF Power MOS FET (Discrete) > RD16HHF1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W DESCRIPTION...
Datasheet	RD16HHF1 PDF File

Overview

< Silicon RF Power MOS FET (Discrete) > RD16HHF1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W DESCRIPTION RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications.
FEATURES High power gain: Pout>16W, Gp>16dB @Vds=12.
5V,f=30MHz Integrated gate protection diode 12.
3+/-0.
6 3.
2+/-0.
4 4.
8MAX 9+/-0.
4 OUTLINE DRAWING 9.
1+/-0.
7 3.
6+/-0.
2 2 1.
2+/-0.
4 0.
8+0.
10/-0.
15 1.
3+/-0.
4 12.
3MIN APPLICATION For output stage of high power amplifiers in HF band mobile radio sets.
123 2.
5 2.
5 5deg 0.
5+0.
10/-0.
15 3.
1+/-0.
6 4.
5 +/- 0.
5 RoHS COMPLIANT RD16HHF1-501 is a RoHS compliant product.
PINS 1: GAT E 9.
5MAX 2:SOURCE note: 3:DRAIN Torelance ...

Similar Datasheet

RD16HHF1 Silicon MOSFET Power Transistor - Mitsubishi Electric

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