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K6T8008C2M

Part Number	K6T8008C2M
Manufacturer	Samsung semiconductor
Description	1Mx8 bit Low Power and Low Voltage CMOS Static RAM
Published	Jul 2, 2008
Detailed Description	K6T8008C2M Family Document Title 1Mx8 bit Low Power and Low Voltage CMOS Static RAM CMOS SRAM Revision History Revisio...
Datasheet	K6T8008C2M PDF File

Overview

K6T8008C2M Family Document Title 1Mx8 bit Low Power and Low Voltage CMOS Static RAM CMOS SRAM Revision History Revision No.
History 0.
0 1.
0 Initial draft Finalize - Adopt New Code system.
- Improve VIN, VOUT max.
on A ’ BSOLUTE MAXIMUM RATINGS’from 7.
0V to VCC+0.
5V.
- Change Icc: from 12 to 10mA - Change Icc1: from 10 to 12mA Draft Date June 22, 1999 February 29, 2000 Remark Advance Final www.
DataSheet4U.
com The attached datasheets are provided by SAMSUNG Electronics.
SAMSUNG Electronics CO.
, LTD.
reserve the right to change the specifications and products.
SAMSUNG Electronics will answer to yourquestions about device.
If you have any questions, please contact the SAMSUNG branch office...

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K6T8008C2M 1Mx8 bit Low Power and Low Voltage CMOS Static RAM - Samsung semiconductor

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