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IXFN34N100

IXYS Corporation
Part Number IXFN34N100
Manufacturer IXYS Corporation
Description Power MOSFET
Published Jul 4, 2008
Detailed Description HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFN 34N100 ...
Datasheet PDF File IXFN34N100 PDF File

IXFN34N100
IXFN34N100

Overview
HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFN 34N100 VDSS ID25 RDS(on) = 1000V = 34A = 0.
28W D G S S Symbol www.
DataSheet4U.
com Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C, Chip capability TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ£ 150°C, RG = 2 W TC= 25°C Maximum Ratings 1000 1000 ± 20 ± 30 34 136 34 64 4 5 700 -55 .
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+150 150 -55 .
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+150 V V V V A A A mJ J V/ns W °C °C °C V~ V~ VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight miniBLOC, SOT-227 B (IXFN) E153432 S G ...


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