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MMST918

Rohm
Part Number MMST918
Manufacturer Rohm
Description NPN High Frequency Transistor
Published Jul 16, 2008
Detailed Description MMST918 / PN918 Transistors NPN High Frequency Transistor MMST918 / PN918 zFeatures 1) High current gain-bandwidth prod...
Datasheet PDF File MMST918 PDF File

MMST918
MMST918

Overview
MMST918 / PN918 Transistors NPN High Frequency Transistor MMST918 / PN918 zFeatures 1) High current gain-bandwidth product fT=600MHz www.
DataSheet4U.
com zExternal dimensions (Unit : mm) MMST918 (1) 2.
9±0.
2 1.
9±0.
2 0.
95 0.
95 1.
1+0.
2 −0.
1 0.
8±0.
1 0.
2 1.
6+ −0.
1 2.
8±0.
2 zPackage, marking, and packaging specifications Part No.
Packaging type Marking Code Basic ordering unit (pieces) MMST918 SMT3 RVX T146 3000 PN918 TO-92 − T93 3000 (2) 0 ∼ 0.
1 (3) +0.
1 0.
15 − 0.
06 0.
4 +0.
1 −0.
05 All terminals have same dimensions PN918 4.
8±0.
2 4.
8±0.
2 3.
7±0.
2 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current MMST918 Collector power dissipation PN918 Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits 30 15 3 50 0.
2 0.
310 150 −55 to +150 Unit V V V A W W °C °C (12.
7Min.
) zAbsolute maximum ratings (Ta = 25°C) ROHM : TO-92 EIAJ : SC-43 2.
5Min.
0.
5±0.
1 (1) (2) (3) 5 0.
3 2.
5 + −0.
1 0.
3 ∼ 0.
6 ROHM : SMT3 EIAJ : SC-59 (1) Emitter (2) Base (3) Collector +0.
15 0.
45 − 0.
05 2.
3 (1) Emitter (2) Base (3) Collector zElectrical characteristics (Ta = 25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current DC current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Output capacitance Emitter input capacitance Noise figure Power gain Output power Collector efficiency Symbol BVCBO BVCEO BVEBO ICBO hFE VCE(sat) VBE(sat) fT Cob Cib NF Gpe Pout η Min.
30 15 3.
0 − − 20 − − 600 − − − − 15 30 25 Typ.
− − − − − − − − − − − − − − − − Max.
− − − 0.
01 1.
0 − 0.
4 1.
0 − 1.
7 3.
0 2.
0 6.
0 − − − Unit V V V µA µA − V V MHz pF pF pF dB dB mW % IC=1.
0µA IC=3.
0mA IE=10µA VCB=15V VCB=15V , IE=0 , Ta=150°C IC=3.
0mA , VCE=1.
0V IC/IB=10mA/1mA IC/IB=10mA/1mA Conditions IC=4.
0mA , VCE=10V, f=100MHz VCB=10V , IE=0 , f=140kHz VCB=0 , IE=0 , f=140kHz VEB=0.
5V , IC=0 , f=140kHz IC=1.
0mA...


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