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2D0N60P

KEC
Part Number 2D0N60P
Manufacturer KEC
Description KHB2D0N60P
Published Jul 18, 2008
Detailed Description SEMICONDUCTOR TECHNICAL DATA General Description KHB2D0N60P/F/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR KHB2D0N60P A O ...
Datasheet PDF File 2D0N60P PDF File

2D0N60P
2D0N60P

Overview
SEMICONDUCTOR TECHNICAL DATA General Description KHB2D0N60P/F/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR KHB2D0N60P A O C F E G B Q I DIM MILLIMETERS _ 0.
2 9.
9 + A B C D E This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.
It is mainly suitable for switching mode power supplies.
FEATURES VDSS= 600V, ID= 2.
0A Drain-Source ON Resistance : www.
DataSheet4U.
com K M L J D N N P F G H I J 15.
95 MAX 1.
3+0.
1/-0.
05 _ 0.
1 0.
8 + _ 0.
2 3.
6 + _ 0.
1 2.
8 + 3.
7 0.
5+0.
1/-0.
05 1.
5 _ 0.
3 13.
08 + 1.
46 _ 0.
1 1.
4 + _ 0.
1 1.
27 + _ 0.
2 2.
54 + _ 0.
2 4.
5 + _ 0.
2 2.
4 + _ 0.
2 9.
2 + H K L M N O P Q RDS(ON)=5.
0 @VGS = 10V Qg(typ.
) = 10.
9nC 1 2 3 MAXIMUM RATING (Tc=25 ) RATING 1.
GATE 2.
DRAIN 3.
SOURCE TO-220AB CHARACTERISTIC SYMBOL KHB2D0N60F UNIT KHB2D0N60P KHB2D0N60F2 600 30 2.
0 2.
0* 1.
2* 8.
0* 120 5.
4 5.
5 54 23 0.
18 150 -55 150 mJ mJ V/ns Q KHB2D0N60F A F C Drain-Source Voltage Gate-Sourc...


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