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IRFW520A

Fairchild Semiconductor
Part Number IRFW520A
Manufacturer Fairchild Semiconductor
Description Advanced Power MOSFET
Published Jul 23, 2008
Detailed Description Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology www.DataSheet4U.com IRFW/I520A ...
Datasheet PDF File IRFW520A PDF File

IRFW520A
IRFW520A

Overview
Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology www.
DataSheet4U.
com IRFW/I520A BVDSS = 100 V RDS(on) = 0.
2 Ω ID = 9.
2 A D2-PAK 2 Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µA (Max.
) @ VDS = 100V Lower RDS(ON) : 0.
155 Ω (Typ.
) Ο I2-PAK 1 1 3 2 3 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Ene...


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