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IXFR200N10P

IXYS Corporation

PolarTM HiPerFET Power MOSFET


Description
Advanced Technical Information PolarTM HiPerFET Power MOSFET Electrically Isolated Tab IXFR 200N10P VDSS ID25 RDS(on) = 100 V = 133 A = 8 mΩ N-Channel Enhancement Mode Fast Recovery Diode, Avavanche Rated www.DataSheet4U.com Symbol Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Maximum Ratings 100 100 ± 20 ± 30 V V V V A A A A mJ ...



IXYS Corporation

IXFR200N10P

PDF File IXFR200N10P PDF File


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