DatasheetsPDF.com

APTGS75X170E3

Advanced Power Technology
Part Number APTGS75X170E3
Manufacturer Advanced Power Technology
Description 3 Phase bridge NPT IGBT Power Module
Published Jul 25, 2008
Detailed Description APTGS75X170E3 3 Phase bridge NPT IGBT Power Module • www.DataSheet4U.com VCES = 1700V IC = 75A @ Tc = 80°C Application ...
Datasheet PDF File APTGS75X170E3 PDF File

APTGS75X170E3
APTGS75X170E3

Overview
APTGS75X170E3 3 Phase bridge NPT IGBT Power Module • www.
DataSheet4U.
com VCES = 1700V IC = 75A @ Tc = 80°C Application AC Motor control Features • Non Punch Through (NPT) Low Loss IGBT® - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated Kelvin emitter for easy drive Very low stray inductance High level of integration 19 17 15 • • • Benefits 20 14 21 13 1 2 3 4 5 6 7 8 9 10 11 12 • • • • • • • Stable temperature behavior Very rugged Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat Low profile Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Operating Area TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 125°C 150A@1600V These Devices are sensitive to Electrostatic Discharge.
Proper Handing Procedures Should Be Followed.
APT website – http://www.
advancedpower.
com 1-3 APTGS75X170E3 – Rev 0 July, 2003 Max ratings 1700 150 75 250 ±20 625 Unit V A V W APTGS75X170E3 Electrical Characteristics Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage ICES VCE(on) VGE(th) IGES www.
DataSheet4U.
com All ratings @ Tj = 25°C unless otherwise specified Test Conditions VGE = 0V, IC = 1mA Tj = 25°C VGE = 0V VCE = 1700V Tj = 125°C T j = 25°C VGE =15V IC = 75A Tj = 125°C VGE = VCE , IC = 3.
5 mA VGE = 20V, VCE = 0V Min Typ Max 0.
15 3.
3 6.
5 100 1700 Unit V mA V V nA Zero Gate Voltage Collector Current Collector Emitter on Voltage Gate Threshold Voltage Gate – Emitter Leakage Current 0.
03 2 2.
7 3.
2 4.
5 Dynamic Characteristics Symbol Characteristic Cies Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eoff Input Capacitance T...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)