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SDD36

Sirectifier Semiconductors
Part Number SDD36
Manufacturer Sirectifier Semiconductors
Description Diode-Diode Modules
Published Jul 28, 2008
Detailed Description SDD36 Diode-Diode Modules Dimensions in mm (1mm=0.0394") Type SDD36N08 SDD36N12 SDD36N14 SDD36N16 SDD36N18 VRSM V 900 13...
Datasheet PDF File SDD36 PDF File

SDD36
SDD36

Overview
SDD36 Diode-Diode Modules Dimensions in mm (1mm=0.
0394") Type SDD36N08 SDD36N12 SDD36N14 SDD36N16 SDD36N18 VRSM V 900 1300 1500 1700 1900 VRRM V 800 1200 1400 1600 1800 www.
DataSheet4U.
com Symbol IFRMS IFAVM TVJ=TVJM TC=100oC; 180o sine TVJ=45oC VR=0 TVJ=TVJM VR=0 TVJ=45oC VR=0 TVJ=TVJM VR=0 Test Conditions Maximum Ratings 60 36 Unit A IFSM t=10ms (50Hz), sine t=8.
3ms (60Hz), sine t=10ms(50Hz), sine t=8.
3ms(60Hz), sine t=10ms (50Hz), sine t=8.
3ms (60Hz), sine t=10ms(50Hz), sine t=8.
3ms(60Hz), sine 650 760 580 630 2100 2400 1700 1900 -40.
.
.
+150 150 -40.
.
.
+125 A i2dt A2s TVJ TVJM Tstg VISOL Md Weight 50/60Hz, RMS _ IISOL<1mA t=1min t=1s o C 3000 3600 2.
5-4/22-35 2.
5-4/22-35 90 V~ Nm/lb.
in.
g Mounting torque (M5) Terminal connection torque (M5) Typical including screws SDD36 Diode-Diode Modules Symbol IR VF VTO rT www.
DataSheet4U.
com QS IRM RthJC RthJK dS dA a per diode; DC current per module per diode; DC current per module TVJ=TVJM; VR=VRRM IF=80A; TVJ=25 C o Test Conditions Characteristic Values 10 1.
38 0.
8 6.
1 50 6 1.
0 0.
5 1.
2 0.
6 12.
7 9.
6 50 Unit mA V V m uC A K/W K/W mm mm m/s2 For power-loss calculations only TVJ=TVJM TVJ=125 C; IF=25A; -di/dt=0.
6A/us o Creepage distance on surface Strike distance through air Maximum allowable acceleration FEATURES * International standard package * Copper base plate * Planar passivated chips * Isolation voltage 3600 V~ APPLICATIONS * Supplies for DC power equipment * DC supply for PWM inverter * Field supply for DC motors * Battery DC power supplies ADVANTAGES * Space and weight savings * Simple mounting * Improved temperature and power cycling * Reduced protection circuits SDD36 Diode-Diode Modules www.
DataSheet4U.
com Fig.
1 Surge overload current IFSM: Crest value, t: duration Fig.
2 i2dt versus time (1-10 ms) Fig.
2a Maximum forward current at case temperature Fig.
3 Power dissipation versus forward current and ambient temperature (per diode) Fig.
4 Single phase rectifier bridge: Power dissi...


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