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SSM6J205FE
High-Speed Switching Applications
Description
SSM6J205FE TOSHIBA Field-Effect
Transistor
Silicon P-Channel MOS Type SSM6J205FE High-Speed Switching Applications Power Management Switch Applications 1.8V drive P-ch 2-in-1 Low ON-resistance: Unit: mm Ron = 460 mΩ (max) (@VGS = −1.8 V) Ron = 306 mΩ (max) (@VGS = −2.5 V) Ron = 234 mΩ (max) (@VGS = −4.0 V) www.DataSheet4U.com Absolute Maximum Ratin...
Toshiba Semiconductor
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SSM6J205FE
High-Speed Switching Applications
- Toshiba Semiconductor
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