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HY27US16561M

Hynix Semiconductor
Part Number HY27US16561M
Manufacturer Hynix Semiconductor
Description (HY27xSxx561M) 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash
Published Jul 31, 2008
Detailed Description HY27SS(08/16)561M Series HY27US(08/16)561M Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Document Title 256Mbit (32Mx...
Datasheet PDF File HY27US16561M PDF File

HY27US16561M
HY27US16561M

Overview
HY27SS(08/16)561M Series HY27US(08/16)561M Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Document Title 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Memory Revision History No.
www.
DataSheet4U.
com 0.
0 0.
1 0.
2 Initial Draft Renewal Product Group Append 1.
8V Operation Product to Data sheet Insert Spare Enable function for GND Pin(#6) - In case of Reading or Programming, GND Pin(#6) should be Low or High.
- Change the test condition of Stand-by current-Refer to Table 13.
Change CSP Package name & thickness - Name : VFBGA -> FBGA - Thickness : 1.
0mm(max) -> 1.
2mm(max) 1) Delete Cache Program Mode 2) Modify the description of Device Operations - /CE Don’t Care Enabled(Disabled) -> Sequential Row Read Disabled(Enabled) (Page23) 1) change FBGA dimension : Thickness : 1.
2mm(max) -> 1.
0mm(max) 2) Edit Fig.
33 read operation with CE don't care 1) Change TSOP1,WSOP1,FBGA package dimension 0.
6 - Change TSOP1,WSOP1,FBGA mechanical data - Inches parameter has been excluded from the mechanical data table 1) Change TSOP1, WSOP1, FBGA package dimension 2) Edit TSOP1, WSOP1 package figures 3) Change FBGA package figure Oct.
18.
2004 Preliminary History Draft Date Jul.
10.
2003 Dec.
08.
2003 Dec.
08.
2003 Remark Preliminary Preliminary Preliminary 0.
3 Mar.
08.
2004 Preliminary 0.
4 Jun.
01.
2004 Preliminary 0.
5 Sep.
24.
2004 Preliminary 0.
7 Oct.
20.
2004 This document is a general product description and is subject to change without notice.
Hynix does not assume any responsibility for use of circuits described.
No patent licenses are implied.
Rev 0.
7 / Oct.
2004 1 HY27SS(08/16)561M Series HY27US(08/16)561M Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash FEATURES SUMMARY HIGH DENSITY NAND FLASH MEMORIES - Cost effective solutions for mass storage applications FAST BLOCK ERASE - Block erase time: 2ms (Typ) NAND INTERFACE - x8 or x16 bus width.
- Multiplexed Address/ Data www.
DataSheet4U.
com - Pinout compatibility for all densities STATUS REGISTER ELECTRONIC SIGNATURE ...


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