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FDS6680AS

Fairchild Semiconductor
Part Number FDS6680AS
Manufacturer Fairchild Semiconductor
Description 30V N-Channel MOSFET
Published Aug 5, 2008
Detailed Description FDS6680AS 30V N-Channel PowerTrench® SyncFET™ May 2008 FDS6680AS tm 30V N-Channel PowerTrench® SyncFET™ General Des...
Datasheet PDF File FDS6680AS PDF File

FDS6680AS
FDS6680AS

Overview
FDS6680AS 30V N-Channel PowerTrench® SyncFET™ May 2008 FDS6680AS tm 30V N-Channel PowerTrench® SyncFET™ General Description Features The FDS6680AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies.
This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge.
The FDS6680AS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology.
The performance of the FDS6680AS as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDS6680 in parallel with a Schottky diode.
Applications • 11.
5 A, 30 V.
RDS(ON) max= 10.
0 mΩ @ VGS = 10 V RDS(ON) max= 12.
5 mΩ @ VGS = 4.
5 V • Includes SyncFET Schottky body diode • Low gate charge (22nC typical) • High performance trench technology for extremely low RDS(ON) and fast switching • High power and current handling capability • DC/DC converter • Low side notebooks D D D D SO-8 G SS S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Power Dissipation for Single Operation (Note 1a) (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) Package Marking and Ordering Information Device Marking Device Reel Size FDS6680AS FDS6680AS 13’’ 5 6 7 8 Ratings 30 ±20 11.
5 50 2.
5 1.
2 1 –55 to +150 50 25 Tape width 12mm 4 3 2 1 Units V V A W °C °C/W °C/W Quantity 2500 units ©2008 Fairchild Semiconductor Corporation FDS6680AS Rev B2(X) FDS6680AS 30V N-Channel PowerTrench® SyncFET™ Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperatur...


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