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TE53N50E

Motorola
Part Number TE53N50E
Manufacturer Motorola
Description MTE53N50E
Published Aug 8, 2008
Detailed Description MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTE53N50E/D .™ Power Field Effect Transistor N–Channel E...
Datasheet PDF File TE53N50E PDF File

TE53N50E
TE53N50E

Overview
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTE53N50E/D .
™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced high voltage TMOS E–FET is designed to withstand high energy in the avalanche mode and switch efficiently.
This new high energy device also offers a drain–to–source diode with fast recovery time.
Designed for high voltage, high speed switching applications such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive www.
DataSheet4U.
com loads are switched and offer additional safety margin against unexpected voltage transients...


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