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IXGH32N60BU1

IXYS Corporation
Part Number IXGH32N60BU1
Manufacturer IXYS Corporation
Description HiPerFAST IGBT
Published Aug 18, 2008
Detailed Description HiPerFASTTM IGBT with Diode IXGH 32N60BU1 VCES IC25 VCE(sat) tfi = 600 V = 60 A = 2.3 V = 80 ns www.DataSheet4U.com ...
Datasheet PDF File IXGH32N60BU1 PDF File

IXGH32N60BU1
IXGH32N60BU1

Overview
HiPerFASTTM IGBT with Diode IXGH 32N60BU1 VCES IC25 VCE(sat) tfi = 600 V = 60 A = 2.
3 V = 80 ns www.
DataSheet4U.
com Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 33 Ω Clamped inductive load, L = 100 µH TC = 25°C Maximum Ratings 600 600 ± 20 ± 30 60 32 120 ICM = 64 @ 0.
8 VCES 200 -55 .
.
.
+150 150 -55 .
.
.
+150 300 1.
13/10 6 V V V V A A A A W °C °C °C °C Nm/lb.
in.
g TO-247 AD C (TAB) G C E G = Gate, E = Emitter, C = Collector, TAB = Collector Maximum Lead and Tab temperature for soldering 1.
6 mm (0.
062 in.
) fr...


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