DatasheetsPDF.com

MT6L72FS

Part Number	MT6L72FS
Manufacturer	Toshiba Semiconductor
Description	VHF-UHF Band Low Noise Amplifier Application
Published	Aug 18, 2008
Detailed Description	MT6L72FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L72FS VHF~UHF Band Low-Noise Amplifier Applications Tw...
Datasheet	MT6L72FS PDF File

Overview

MT6L72FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L72FS VHF~UHF Band Low-Noise Amplifier Applications Two devices are incorporated in a fine-pitch, small-mold package (6 pins): fS6.
1.
0±0.
05 0.
1±0.
05 0.
35 0.
35 0.
8±0.
05 0.
1±0.
05 0.
15±0.
05 Unit: mm 1.
0±0.
05 0.
7±0.
05 • • • Superior noise characteristics Superior performance in buffer and oscillator applications Lead (Pb)-free.
1 2 3 6 5 4 0.
1±0.
05 Mounted Devices www.
DataSheet4U.
com Q1 Corresponding three-pin products: fSM mold products MT3S36FS Q2 MT3S11AFS 0.
48 +0.
02 -0.
04 Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol Q1 VCBO VCEO VEBO IC IB PC (Note 1) Tj Tstg 8 4.
5 1.
5 36 18 100 Rating Q2 13 6 1 40 10 90 mW 105 (Note 2) 125 −55~125 °C °C V V V mA mA Unit fS6 1.
Collector1 (C1) 2.
Emitter1 (E1) 3.
Collector2 (C2) 4.
Base2 (B2) 5.
Emitter2 (E2) 6.
Base1 (B1) JEDEC JEITA TOSHIBA Weight: 0.
001g (typ.
) ― ― 2-1F1A Note 1: 10 mm2 × 1.
0 mm (t), mounted on a glass-epoxy printed circuit board.
Note 2: During two-element operation.
Marking (top view) 6 5 4 Pin Assignment (top view) B1 E2 B2 1X 1 2 3 Q1 Q2 C1 E1 C2 1 2005-08-01 MT6L72FS Electrical Characteristics Q1 (Ta = 25°C) Characteristic Collector cutoff current Emitter cutoff current DC current gain Reverse transfer capacitance Transition frequency Insertion gain Noise figure Symbol ICBO IEBO hFE Cre(Note) fT Condition VCB = 8 V, IE = 0 VEB = 1 V, IC = 0 VCE = 3 V, IC = 10 mA VCB = 1 V, IE = 0, f = 1 MHz VCE = 3 V, IC = 15 mA 2 Min Typ.
Max 1 1 140 0.
4 Unit ⎯ ⎯ 70 ⎯ ⎯ ⎯ 0.
21 20 18.
5 13 1.
3 µA µA ⎯ pF GHz dB dB ⎯ 16 16.
5 10.
5 ⎯ ⎯ ⎯ 1.
8 ⎪S21e⎪ (1) ⎪S21e⎪2 (2) NF VCE = 3 V, IC = 15 mA, f = 1 GHz VCE = 3 V, IC = 15 mA, f = 2 GHz VCE = 3 V, IC = 3 mA, f = 2 GHz ⎯ www.
DataSheet4U.
com Electrical Characteristics Q2 (Ta = 25°C) Characteristic Collect...

Similar Datasheet

MT6L72FS VHF-UHF Band Low Noise Amplifier Application - Toshiba Semiconductor

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)