DatasheetsPDF.com

MT6L76FS

Part Number	MT6L76FS
Manufacturer	Toshiba Semiconductor
Description	VHF-UHF Band Low Noise Amplifier Application
Published	Aug 18, 2008
Detailed Description	MT6L76FS TOSHIBA TRANSISTOR SILICON, SILICON GERMANIUM NPN EPITAXIAL PLANAR TYPE MT6L76FS VHF~UHF BAND LOW NOISE AMPLIF...
Datasheet	MT6L76FS PDF File

Overview

MT6L76FS TOSHIBA TRANSISTOR SILICON, SILICON GERMANIUM NPN EPITAXIAL PLANAR TYPE MT6L76FS VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Two devices are built in to the fine pich small mold package (6pins):fs6 0.
1±0.
05 1.
0±0.
05 0.
8±0.
05 0.
1±0.
05 0.
15±0.
05 Unit: mm 0.
35 0.
35 1.
0±0.
05 0.
7±0.
05 • • It exsels in the buffer and oscillation use.
Leed (Pb)-free.
1 2 3 6 5 4 0.
1±0.
05 Mounted Devices www.
DataSheet4U.
com Q1 Three-pin fSM mold products are corresponded MT3S06FS Q2 MT3S106FS Maximum Ratings (Ta = 25°C) CHARACTERISTICS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current SYMBOL Q1 VCBO VCEO VEBO IC IB 10 5 1.
5 15 7 100 110 (Note 2) Junction temperature Storage temperature range 2 0.
48 -0.
04 +0.
02 RATING Q2 13 6 1 80 20 UNIT V V V mA mA 1.
COLLECTOR 1 2.
EMITTER1 3.
COLLECTOR2 4.
BASE2 5.
EMITTER2 6.
BASE1 fS6 JEDEC JEITA TOSHIBA •\ •\ 2-1F1A Weight : 0.
001g (typ.
) °C °C Tj Tstg 125 −55~125 Note 1 : 1.
0 cm × 1.
0 mm (t) at the time of glass epoxy printed circuit board mounting.
Note 2 : At the time of two-element operation Marking (top view) 6 5 4 Pin Assignment (top view) B1 E2 B2 53 1 2 3 Q1 Q2 C1 E1 C2 1 2005-06-13 MT6L76FS ELECTRICAL CHARACTERISTICS Q1 (Ta = 25°C) CHARACTERISTICS Collector Cut-off Current Emitter Cut-off Current DC Current Gain Reverse Transfer Capacitance Transition Frequency Insertion Gain Noise Figure www.
DataSheet4U.
com SYMBOL ICBO IEBO hFE Cre (Note) fT S21e (1) 2 2 CONDITION VCB = 5 V, IE = 0 VEB = 1 V, IC = 0 VCE = 1 V, IC = 5 mA VCB = 1 V, IE = 0, f = 1 MHz VCE = 3 V, IC = 5 mA VCE = 1 V, IC = 5 mA, f = 2 GHz VCE = 3 V, IC = 7 mA, f = 2 GHz VCE = 1 V, IC = 3 mA, f = 2 GHz MIN.
  70  7  7  TYP.
   0.
25 10 8.
5 9.
5 1.
7 MAX.
0.
1 1 140 0.
5    3 UNIT µA µA  pF GHz dB dB S21e (2) NF ELECTRICAL CHARACTERISTICS Q2 (Ta = 25°C) CHARACTERISTICS Collector Cut-off Current Emitter Cut-off Current DC Current Gain Reverse Transfer Capacitance Transition Freq...

Similar Datasheet

MT6L76FS VHF-UHF Band Low Noise Amplifier Application - Toshiba Semiconductor

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)