PRELIMINARY
CGH35030F
30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX
Cree’s CGH35030F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier applications. The transistor is supplied in a ceram...
