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HY5R128HCxxx

Hynix Semiconductor
Part Number HY5R128HCxxx
Manufacturer Hynix Semiconductor
Description (HY5R1xxHCxxx) RDRAM
Published Aug 21, 2008
Detailed Description Direct RDRAM™ 128/144Mbit (256Kx16/18x32s) Preliminary Overview The Rambus Direct RDRAM™ is a general purpose highperfor...
Datasheet PDF File HY5R128HCxxx PDF File

HY5R128HCxxx
HY5R128HCxxx

Overview
Direct RDRAM™ 128/144Mbit (256Kx16/18x32s) Preliminary Overview The Rambus Direct RDRAM™ is a general purpose highperformance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and low latency are required.
The 128/144-Mbit Direct Rambus DRAMs (RDRAM®) are extremely high-speed CMOS DRAMs organized as 8M words by 16 or 18 bits.
The use of Rambus Signaling Level (RSL) technology permits 600MHz to 800MHz transfer www.
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com rates while using conventional system and board design technologies.
Direct RDRAM devices are capable of sustained data transfers at 1.
25 ns per two bytes (10ns per sixteen bytes).
The architecture of the Direct RDRAMs allows the highest sustained bandwidth for multiple, simultaneous randomly addressed memory transactions.
The separate control and data buses with independent row and column control yield over 95% bus efficiency.
The Direct RDRAM's 32 banks su...


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