N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
Description
STD3N30L
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
TYPE STD3N30L
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s s s s s
V DSS 300 V
R DS( on) < 1.4 Ω
ID 3A
s
s
TYPICAL RDS(on) = 1.15 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED CHARACTERIZATION THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX ”-1”) ...
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