SSM3K04FE
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K04FE
High Speed Switching Applications
With built-in gate-source resistor: RGS = 1 MΩ (typ.) 2.5 V gate drive Low gate threshold voltage: Vth = 0.7~1.3 V Small package Unit: mm
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Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Gate...
