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SSM3K04FV

Toshiba Semiconductor
Part Number SSM3K04FV
Manufacturer Toshiba Semiconductor
Description High Speed Switching Applications
Published Sep 11, 2008
Detailed Description SSM3K04FV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K04FV High Speed Switching Applications 0.22±0...
Datasheet PDF File SSM3K04FV PDF File

SSM3K04FV
SSM3K04FV

Overview
SSM3K04FV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K04FV High Speed Switching Applications 0.
22±0.
05 Unit: mm 1.
2±0.
05 0.
8±0.
05 0.
32±0.
05 3 2 0.
13±0.
05 • • • • With built-in gate-source resistor: RGS = 1 MΩ (typ.
) 2.
5 V gate drive High input impedance 1.
2±0.
05 0.
8±0.
05 0.
4 Low gate threshold voltage: Vth = 0.
7~1.
3 V Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage DC drain current Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature range Symbol VDS VGSS ID PD (Note 1) Tch Tstg Rating 20 10 100 150 150 −55~150 Unit V V mA mW °C °C 0.
5±0.
05 0.
4 • Optimum for high-density mounting in small packag...


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