SSM3K303T
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K303T
High Speed Switching Applications
4 V drive Low ON-resistance:
Ron = 120 mΩ (max) (@VGS = 4V) Ron = 83 mΩ (max) (@VGS = 10V)
Absolute Maximum Ratings (Ta = 25°C)
Unit: mm
Characteristic
Symbol
Rating
Unit
Drain–source voltage
VDS
30
V
Gate–source voltage
VGSS
±...
