DatasheetsPDF.com

M25JZ51

Toshiba Semiconductor
Part Number M25JZ51
Manufacturer Toshiba Semiconductor
Description SM25JZ51
Published Oct 9, 2008
Detailed Description SM25GZ51,SM25JZ51 TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR ILICON PLANAR TYPE SM25GZ51,SM25JZ51 AC POWER CONTROL APPLICA...
Datasheet PDF File M25JZ51 PDF File

M25JZ51
M25JZ51

Overview
SM25GZ51,SM25JZ51 TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR ILICON PLANAR TYPE SM25GZ51,SM25JZ51 AC POWER CONTROL APPLICATIONS l Repetitive Peak Off−State Voltage : VDRM = 400, 600V l R.
M.
S On−State Current l High Commutating (dv / dt) l Isolation Voltage www.
DataSheet4U.
com Unit: mm : IT (RMS) = 25A : (dv / dt) c = 10V / µs : VIsol = 1500V AC MAXIMUM RATINGS CHARACTERISTIC Repetitive Peak Off−State Voltage SM25GZ51 SM25JZ51 SYMBOL VDRM IT (RMS) ITSM I t (Note 1) di / dt PGM PG (AV) VGM IGM Tj Tstg VIsol 2 RATING 400 600 25 230 (50Hz) 253 (60Hz) 260 50 5 0.
5 10 2 −40~125 −40~125 1500 UNIT V A A A s A / µs W W V A °C °C V 2 R.
M.
S On−State Current (Full Sine Waveform Tc = 73°C) Peak One Cycle Surge On−State Current (Non-Repetitive) I t Limit Value Critical Rate of Rise of On−State Current Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Voltage Peak Gate Current Junction Temperature Storage Temperature Range Isolation Voltage (AC, t = 1 min.
) 2 JEDEC JEITA TOSHIBA Weight: 5.
9g ― ― 13−16A1A Note 1: di / dt Test Condition VDRM = 0.
5 × Rated ITM ≤ 40A tgw ≥ 10µs tgr ≤ 250ns igp = IGT × 2.
0 1 2001-07-13 SM25GZ51,SM25JZ51 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Repetitive Peak Off−State Current I Gate Trigger Voltage II III I Gate Trigger Current II III Peak On−State Voltage www.
DataSheet4U.
com Gate Non−Trigger Voltage Holding Current Thermal Resistance Critical Rate of Rise of Off−State Voltage Critical Rate of Rise of Off−State Voltage at Commutation VTM VGD IH Rth (j−c) dv / dt (dv / dt) c ITM = 40A VD = Rated, Tc = 125°C VD = 12V, ITM = 1A Junction to Case, AC VDRM = Rated, Tj = 125°C Exponential Rise VDRM = 400V, Tj = 125°C (di / dt) c = − 15A / ms IGT VD = 12V RL = 20Ω VGT VD = 12V RL = 20Ω SYMBOL IDRM TEST CONDITION VDRM = Rated T2 (+) , Gate (+) T2 (+) , Gate (−) T2 (−) , Gate (−) T2 (+) , Gate (+) T2 (+) , Gate (−) T2 (−) , Gate (−) MIN ― ― ― ― ― ― ― ― 0.
2 ― ― ― 10 TYP.
― ― ― ― ― ― ― ― ― ― ― 300 ― MAX 20 1.
5 1.
5 1.
5 30 ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)