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AP730P

Advanced Power Electronics
Part Number AP730P
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Oct 10, 2008
Detailed Description AP730P Advanced Power Electronics Corp. ▼ Dynamic dv/dt Rating ▼ Repetitive Avalanche Rated ▼ Fast Switching www.DataSh...
Datasheet PDF File AP730P PDF File

AP730P
AP730P

Overview
AP730P Advanced Power Electronics Corp.
▼ Dynamic dv/dt Rating ▼ Repetitive Avalanche Rated ▼ Fast Switching www.
DataSheet4U.
com ▼ Simple N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID G D S 400V 1.
0Ω 5.
5A Drive Requirement TO-220 Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching , ruggedized device design , low on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial applications.
The device is suited for switch mode power supplies ,DCAC converters and high current high speed switching circuits.
D G S Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR EAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 400 ± 30 5.
5 3.
5 23 74 0.
59 2 Units V V A A A W W/ ℃ mJ A mJ ℃ ℃ Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Storage Temperature Range Operating Junction Temperature Range 260 5.
5 7 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max.
Max.
Value 1.
7 62 Unit ℃/W ℃/W Data & specifications subject to change without notice 200219032 AP730P Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min.
400 2 - Typ.
0.
36 30 35 3.
7 20 8 20 47 18 565 70 38 Max.
Units 1 4 10 100 ±100 V V/℃ Ω V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA RDS(ON) VGS(th) www.
DataSheet4U.
com g fs Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o VGS=10V, ID=2.
7...


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