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K9F1G08R0A

Samsung semiconductor
Part Number K9F1G08R0A
Manufacturer Samsung semiconductor
Description 128M x 8 Bit / 256M x 8 Bit NAND Flash Memory
Published Oct 25, 2008
Detailed Description K9F1G08R0A K9F1G08U0A K9K2G08U1A FLASH MEMORY Document Title 128M x 8 Bit / 256M x 8 Bit NAND Flash Memory Revision H...
Datasheet PDF File K9F1G08R0A PDF File

K9F1G08R0A
K9F1G08R0A

Overview
K9F1G08R0A K9F1G08U0A K9K2G08U1A FLASH MEMORY Document Title 128M x 8 Bit / 256M x 8 Bit NAND Flash Memory Revision History Revision No 0.
0 0.
1 History 1.
Initial issue 1.
The tADL(Address to Data Loading Time) is added.
- tADL Minimum 100ns (Page 11, 23~26) - tADL is the time from the WE rising edge of final address cycle to the WE rising edge of first data cycle at program operation.
2.
Added Addressing method for program operation Draft Date Aug.
24.
2003 Jan.
27.
2004 Remark Advance Preliminary www.
DataSheet4U.
com 0.
2 0.
3 0.
4 1.
Add the Protrusion/Burr value in WSOP1 PKG Diagram.
1.
PKG(TSOP1, WSOP1) Dimension Change 1.
Technical note is changed 2.
Notes of AC timing characteris...


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