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FPD7612P70

Filtronic Compound Semiconductors
Part Number FPD7612P70
Manufacturer Filtronic Compound Semiconductors
Description HI-FREQUENCY PACKAGED PHEMT
Published Oct 25, 2008
Detailed Description PRELIMINARY • PERFORMANCE ♦ 20 dBm Output Power (P1dB) ♦ 21 dB Power Gain (G1dB) at 1.85 GHz ♦ 0.7 dB Noise Figure at 1....
Datasheet PDF File FPD7612P70 PDF File

FPD7612P70
FPD7612P70

Overview
PRELIMINARY • PERFORMANCE ♦ 20 dBm Output Power (P1dB) ♦ 21 dB Power Gain (G1dB) at 1.
85 GHz ♦ 0.
7 dB Noise Figure at 1.
85 GHz ♦ 30 dBm Output IP3 ♦ 50% Power-Added Efficiency at 1.
85 GHz ♦ Useable Gain to 24 GHz ♦ Evaluation Boards Available FPD7612P70 HI-FREQUENCY PACKAGED PHEMT www.
DataSheet4U.
com GATE LEAD IS ANGLED • DESCRIPTION AND APPLICATIONS The FPD7612P70 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT).
It utilizes a 0.
25 µm x 200 µm Schottky barrier Gate, defined by high-resolution stepper-based photolithography.
.
The FPD7612 is also available in die form .
Typical applications include gain blocks and medium power stages for...


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