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W60N10

STMicroelectronics
Part Number W60N10
Manufacturer STMicroelectronics
Description STW60N10
Published Oct 28, 2008
Detailed Description STH60N10/FI STW60N10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STH60N10 STH60N10FI www.DataSheet4U.com STW6...
Datasheet PDF File W60N10 PDF File

W60N10
W60N10

Overview
STH60N10/FI STW60N10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STH60N10 STH60N10FI www.
DataSheet4U.
com STW60N10 s s s s s s s s V DSS 100 V 100 V 100 V R DS( on) < 0.
025 Ω < 0.
025 Ω < 0.
025 Ω ID 60 A 36 A 60 A TO-247 TYPICAL RDS(on) = 0.
02 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE VERY HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION 3 2 1 3 2 3 2 TO-218 1 ISOWATT218 1 APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s REGULATORS s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.
) s INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value STH/STW60N10 VD S V DG R V GS ID ID ID M( •) P tot V ISO T stg Tj Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 kΩ ) Gate-source Voltage Drain Current (continuous) at T c = 25 oC Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max.
Operating Junction Temperature o Unit STH60N10FI V V V 36 22 240 70 0.
56 4000 -65 to 150 150 A A A W W/o C V o o 100 100 ± 20 60 42 240 200 1.
33  -65 to 175 175 C C (•) Pulse width limited by safe operating area May 1993 1/11 STH60N10/FI STW60N10 THERMAL DATA TO-218/TO-247 ISOWATT218 R thj-cas e Rthj- amb Rt hc- sin k Tl Thermal Resistance Junction-case Max 0.
75 30 0.
1 300 1.
79 o o o C/W C/W C/W o C Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose AVALANCHE CHARACTERISTICS Symbol www.
DataSheet4U.
com Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, δ < 1%) Single Pulse Avalanche Energy (starting T j = 25 o C, ID = I AR, VD D = 25 V) Repetitive Avalanche Energy (pulse width limited by T j max, δ < 1%...


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